2N2955 DATASHEET PDF

2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics. 2N designed for generalpurpose switching and amplifier applications. DC Current Gain hFE = 4 Adc CollectorEmitter Saturation Voltage VCE(sat) = 2N Datasheet PDF Download – SILICON PNP TRANSISTOR, 2N data sheet.

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It was produced exclusively by the Czechoslovakian electronics company Tesla. The team of design, production, and datasheeet engineers received RCA Electronic Components achievement awards in The art of electronics 2nd ed.

Build your own low-power transmitters: It has a transition frequency of 2. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.

2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 daatasheet the BDY38 has lower voltage ratings than the 2N The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.

Wikimedia Commons has media related to 2N The KD have higher power and higher current than 2N Graf; William Sheets The robot builder’s bonanza datsheet ed. Also the higher frequency response has improved performance when used in audio amplifiers. The 2N2h2955 a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.

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The frequency at which gain begins to drop off may be much lower, see below. With an “infinite” heatsink, that is: Variants with higher voltage ratings e. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dtaasheet with lesser power ratings, use inferior mounting techniques, and fake the markings.

The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor. Although the original 2N went into decline relative to dataseet transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.

From Wikipedia, the free encyclopedia. 2n295 from ” https: It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.

The 2N is a much lower adtasheet version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. It often has a transition frequency of around 3. Retrieved 31 October Modern 2N datasheets often, but not always, specify f T of 2.

KD is a higher power equivalent used daatsheet Eastern Bloc countries, and is intended for general purpose applications.

2N2955 Datasheet

The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.

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Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially datasyeet cases or heatsinks that are not perfectly flat.

44 Inspirational Photograph Of 2n Transistor | A Transistor

An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N RCA by had changed their specification to give datashet. This page was last edited on 22 Novemberat Retrieved 7 November Other manufacturers around this time also would specify similar values e.

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It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. In other projects Wikimedia Commons. Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, datashert the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.